Design and fabrication of terahertz Extended Interaction Klystrons

Design and fabrication of terahertz Extended Interaction Klystrons

The development of new terahertz power amplifiers at 0.67, 0.85 and 1.03 THz presents significant challenges in both design and fabrication. This paper describes the design challenges and methodology, an outline design of the new device and an analysis of fabrication techniques considered.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Dobbs, R, Roitman, A, Horoyski, P, Hyttinen, M, Sweeney, D, Steer, B, Nguyen, K, Wright, E, Chernin, D, Burke, A, Calame, J, Levush, B, Barker, N S, Booske, J, Blank, M
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Fabrication
Integrated circuit modeling
Klystrons
Laser beams
Lithography
Radio frequency
USA Councils
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The development of new terahertz power amplifiers at 0.67, 0.85 and 1.03 THz presents significant challenges in both design and fabrication. This paper describes the design challenges and methodology, an outline design of the new device and an analysis of fabrication techniques considered.
ISSN:2162-2027
DOI:10.1109/ICIMW.2010.5613040