Terahertz detection by InGaAs HEMTs in quantizing magnetic fields: Relation between magnetoresistance and photovoltaic response

THz detection by plasma wave mechanism in InGaAs HEMTs is studied in high/quantizing magnetic fields regime. The correlation between the photovoltaic response and magnetoresistance is revealed. It allows to explain the nature of strong oscillations observed in the transistor Terahertz photoresponse.

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Bibliographische Detailangaben
Hauptverfasser:	Klimenko, Oleg A., Mityagin, Yury A., Videlier, Hadley, Boubanga-Tombet, Stephane, Teppe, Frederic, Dyakonova, Nina V., Nadar, Salman H., Savinov, Sergey A., Consejo, Christophe, Murzin, Vladimir N., Knap, Wojciech
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Indium gallium arsenide Logic gates Magnetic field measurement Magnetic fields Magnetoresistance Oscillators Transistors
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Beschreibung
Zusammenfassung:	THz detection by plasma wave mechanism in InGaAs HEMTs is studied in high/quantizing magnetic fields regime. The correlation between the photovoltaic response and magnetoresistance is revealed. It allows to explain the nature of strong oscillations observed in the transistor Terahertz photoresponse.
ISSN:	2162-2027
DOI:	10.1109/ICIMW.2010.5612999