Trilayer Electron-beam Lithography and surface preparation for sub-micron Schottky contacts on GaAs heterostructures

Trilayer Electron-beam Lithography and surface preparation for sub-micron Schottky contacts on GaAs heterostructures

Foreseen operation at sub-THz frequencies of Schottky contacts for diodes and transistor gates on GaAs based heterostructures requires area reduction down to 0.1×1 microns, and wet chemical processes. We report on the compatibility of Trilayer Electron-beam Lithography with such wet processes.

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Bibliographische Detailangaben
Hauptverfasser: Dominijanni, D, Casini, R, Foglietti, V, Ortolani, M, Notargiacomo, A, Lanzieri, C, Peroni, M, Romanini, P, Giovine, E
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Gallium arsenide
Logic gates
Resists
Schottky barriers
Surface cleaning
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Beschreibung
Zusammenfassung:Foreseen operation at sub-THz frequencies of Schottky contacts for diodes and transistor gates on GaAs based heterostructures requires area reduction down to 0.1×1 microns, and wet chemical processes. We report on the compatibility of Trilayer Electron-beam Lithography with such wet processes.
ISSN:2162-2027
DOI:10.1109/ICIMW.2010.5612783