AlGaN/GaN heterostructure transistors for the generation and detection of THz radiation

AlGaN/GaN heterostructure transistors for the generation and detection of THz radiation

The AlGaN/GaN heterostructure is an excellent candidate for the realization of sub-millimeter wave power amplifiers, which can serve as integrated power source for THz frequency multipliers. Here we discuss the operation of AlGaN/GaN transistors as THz detector, which provides information on the beh...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Giovine, E, Di Gaspare, A, Ortolani, M, Evangelisti, F, Foglietti, V, Cetronio, A, Dominijanni, D, Lanzieri, C, Peroni, M, Doria, A, Giovenale, E, Spassovsky, I, Gallerano, G P
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aluminum gallium nitride
Couplings
Gallium nitride
HEMTs
Logic gates
MODFETs
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The AlGaN/GaN heterostructure is an excellent candidate for the realization of sub-millimeter wave power amplifiers, which can serve as integrated power source for THz frequency multipliers. Here we discuss the operation of AlGaN/GaN transistors as THz detector, which provides information on the behavior of the electron system at THz frequencies.
ISSN:2162-2027
DOI:10.1109/ICIMW.2010.5612705