Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors

Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors

We present experimental results on the Terahertz radiation from high electron mobility transistors at room temperature, which clearly show the tunability of the emission frequency by the gate voltage.

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Bibliographische Detailangaben
Hauptverfasser: Dyakonova, N, Fatimy, A E, Meziani, Y, Otsuji, T, Coquillat, D, Knap, W, Teppe, F, Vandenbrouk, S, Madjour, K, Theron, D, Gaquiere, C, Poisson, M A, Delage, S
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Gallium nitride
HEMTs
Logic gates
MODFETs
Plasma temperature
Plasma waves
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Beschreibung
Zusammenfassung:We present experimental results on the Terahertz radiation from high electron mobility transistors at room temperature, which clearly show the tunability of the emission frequency by the gate voltage.
ISSN:2162-2027
DOI:10.1109/ICIMW.2010.5612620