Gain and efficiency of THz donor lasing in axially stressed silicon crystal

Gain and efficiency of THz donor lasing in axially stressed silicon crystal

Liquid helium temperature experimental study of terahertz (4-6 THz) lasing of optically excited group-V donors in axially compressed silicon crystal are presented and discussed.

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Bibliographische Detailangaben
Hauptverfasser: Shastin, V N, Zhukavin, Roman Kh, Kovalevsky, K A, Tsyplenkov, V V, Pavlov, S G, Hubers, H.-W
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bismuth
Compressive stress
Crystals
Laser excitation
Laser modes
Silicon
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Beschreibung
Zusammenfassung:Liquid helium temperature experimental study of terahertz (4-6 THz) lasing of optically excited group-V donors in axially compressed silicon crystal are presented and discussed.
ISSN:2162-2027
DOI:10.1109/ICIMW.2010.5612342