Detectivity simulation of Long-wavelength quantum well infrared photodetectors

Detectivity simulation of Long-wavelength quantum well infrared photodetectors

We present the results of a method for the detectivity simulation of multi-period AlGaAs/GaAs Long-wavelength quantum well infrared photodetectors (LW-QWIPs) directly from the characterized device parameters in a self-consistent way. This simulation method takes into account the fundamental mechanis...

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Hauptverfasser: Xiong, D Y, Qiu, W Y, Weng, Q C, Fan, L
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Current density
Electric fields
Laboratories
Lighting
Materials
Noise
Temperature measurement
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Beschreibung
Zusammenfassung:We present the results of a method for the detectivity simulation of multi-period AlGaAs/GaAs Long-wavelength quantum well infrared photodetectors (LW-QWIPs) directly from the characterized device parameters in a self-consistent way. This simulation method takes into account the fundamental mechanisms involved in the detection process. The electrical field distribution, currents and detectivity are carefully calculated and analyzed. The numerical results agree well with our experimental observations.
ISSN:2158-3234
DOI:10.1109/NUSOD.2010.5595645