Simple electroabsorption model for germanium quantum well devices

Simple electroabsorption model for germanium quantum well devices

We present a simple electroabsorption model for germanium quantum wells to facilitate optical modulator design. We show this model is valid for a range of well sizes with an increased exciton-enhanced absorption for thinner wells.

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Bibliographische Detailangaben
Hauptverfasser: Schaevitz, Rebecca K, Edwards, Elizabeth H, Audet, Ross M, Yiwen Rong, Shen Ren, Claussen, Stephanie A, Taşyürek, Emel, Roth, Jonathan E, Harris, James S, Miller, David A B
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Absorption
Electric fields
electroabsorption
Excitons
interconnects
Modulation
optoelectronics
Silicon germanium
Voltage measurement
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Beschreibung
Zusammenfassung:We present a simple electroabsorption model for germanium quantum wells to facilitate optical modulator design. We show this model is valid for a range of well sizes with an increased exciton-enhanced absorption for thinner wells.
ISSN:2158-3234
DOI:10.1109/NUSOD.2010.5595641