IGBT high frequency operation

IGBT high frequency operation

IGBT (insulated gate bipolar transistor) devices have been designed into low frequency (

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Bibliographische Detailangaben
1. Verfasser: Valentine, R.J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Automotive engineering
Driver circuits
Ignition
Insulated gate bipolar transistors
Motor drives
Power control
Power generation
Power system modeling
Radio frequency
Radiofrequency interference
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Beschreibung
Zusammenfassung:IGBT (insulated gate bipolar transistor) devices have been designed into low frequency (
ISSN:0197-2618
2576-702X
DOI:10.1109/IAS.1996.559259