All-diamond integrated field emission device with a micro-tip array cathode

All-diamond integrated field emission device with a micro-tip array cathode

In order to permit (a) lower operating voltage, (b) high accuracy of anode to emitter spacing, and (c) well defined emitter area, a gated poly-C field emission device (FED) is reported. It uses undoped (ρ=10 9 Ω·cm) as an insulation layer and highly-doped (ρ=10 -3 Ω·cm) poly-C as electrodes and inte...

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Bibliographische Detailangaben
Hauptverfasser: Zongliang Cao, Aslam, Dean
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Anodes
Cathodes
diamond pillars
Diamond-like carbon
dry etching
field emission
Plasmas
polycrystalline diamond
Silicon
Surface treatment
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Beschreibung
Zusammenfassung:In order to permit (a) lower operating voltage, (b) high accuracy of anode to emitter spacing, and (c) well defined emitter area, a gated poly-C field emission device (FED) is reported. It uses undoped (ρ=10 9 Ω·cm) as an insulation layer and highly-doped (ρ=10 -3 Ω·cm) poly-C as electrodes and interconnects to create an integrated FED (IFED) with a micro-tip cathode array using dry-etching of poly-C. Fabrication and testing of an all-diamond IFED is reported for the first time.
DOI:10.1109/NEMS.2010.5592462