Radiation effect characterization and test methods of single-chip and multi-chip stacked 16 Mbit DRAMs

Radiation effect characterization and test methods of single-chip and multi-chip stacked 16 Mbit DRAMs

This paper presents radiation effects characterization performed by the NASA Goddard Space Flight Center (GSFC) on spaceflight candidate 16 Mbit DRAMs. This includes heavy ion, proton, and Co/sup 60/ irradiations on single-chip devices as well as proton irradiation of a stacked DRAM module. Lastly,...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on nuclear science 1996-12, Vol.43 (6), p.2974-2981
Hauptverfasser: LaBel, K.A., Gates, M.M., Moran, A.K., Kim, H.S., Seidleck, C.M., Marshall, P., Kinnison, J., Carkhuff, B.
Format: Artikel
Sprache:eng
Schlagworte:
Laboratories
NASA
National electric code
Packaging
Performance evaluation
Protons
Radiation effects
Random access memory
Space vehicles
Testing
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:This paper presents radiation effects characterization performed by the NASA Goddard Space Flight Center (GSFC) on spaceflight candidate 16 Mbit DRAMs. This includes heavy ion, proton, and Co/sup 60/ irradiations on single-chip devices as well as proton irradiation of a stacked DRAM module. Lastly, a discussion of test methodology is undertaken.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.556894