A 0.13 \mu} SiGe BiCMOS Technology Featuring f /f of 240/330 GHz and Gate Delays Below 3 ps

A 0.13 \mu} SiGe BiCMOS Technology Featuring f /f of 240/330 GHz and Gate Delays Below 3 ps

A 0.13 μm SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies f T of 240 GHz, maximum oscillation frequencies f max of 330 GHz, and breakdown voltages BV CEO of 1.7 V along with high-voltage HBTs ( f T = 50 GHz,...

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Veröffentlicht in:IEEE journal of solid-state circuits 2010-09, Vol.45 (9), p.1678-1686
Hauptverfasser: Rücker, Holger, Heinemann, Bernd, Winkler, Wolfgang, Barth, R, Borngraber, J, Drews, J, Fischer, Gerhard G, Fox, Alexander, Grabolla, Thomas, Haak, U, Knoll, Dieter, Korndörfer, Falk, Mai, Andreas, Marschmeyer, Steffen, Schley, P, Schmidt, D, Schmidt, J, Schubert, Markus Andreas, Schulz, K, Tillack, Bernd, Wolansky, D, Yamamoto, Yuji
Format: Artikel
Sprache:eng
Schlagworte:
BiCMOS integrated circuits
CMOS integrated circuits
Delay
Heterojunction bipolar transistors
Logic gates
millimeter wave bipolar integrated circuits
millimeter wave devices
Ring oscillators
silicon alloys
silicon bipolar/BiCMOS process technology
Silicon germanium
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Zusammenfassung:A 0.13 μm SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies f T of 240 GHz, maximum oscillation frequencies f max of 330 GHz, and breakdown voltages BV CEO of 1.7 V along with high-voltage HBTs ( f T = 50 GHz, f max = 130 GHz, BV CEO = 3.7 V) integrated in a dual gate oxide RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators with fundamental-mode oscillation frequencies above 200 GHz are demonstrated.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2010.2051475