Experimental demonstration of high source velocity and its enhancement by uniaxial stress in Ge PFETs

High-field transport in short channel (70 nm) Ge PFETs was, for the first time, thoroughly investigated, in terms of ballisticity and the relationship between carrier velocity and mobility, where 1.6×-2× higher velocity than that in Si PFETs was confirmed. The effectiveness of the uniaxial stress to...

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Bibliographische Detailangaben

Hauptverfasser:	Kobabyashi, M, Mitard, J, Irisawa, T, Hoffmann, Thomas-Y, Meuris, M, Saraswat, K, Nishi, Y, Heyns, M
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Length measurement Logic gates Scattering Silicon Stress Stress measurement Voltage measurement
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