Experimental demonstration of high source velocity and its enhancement by uniaxial stress in Ge PFETs

Experimental demonstration of high source velocity and its enhancement by uniaxial stress in Ge PFETs

High-field transport in short channel (70 nm) Ge PFETs was, for the first time, thoroughly investigated, in terms of ballisticity and the relationship between carrier velocity and mobility, where 1.6×-2× higher velocity than that in Si PFETs was confirmed. The effectiveness of the uniaxial stress to...

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Hauptverfasser: Kobabyashi, M, Mitard, J, Irisawa, T, Hoffmann, Thomas-Y, Meuris, M, Saraswat, K, Nishi, Y, Heyns, M
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Length measurement
Logic gates
Scattering
Silicon
Stress
Stress measurement
Voltage measurement
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Zusammenfassung:High-field transport in short channel (70 nm) Ge PFETs was, for the first time, thoroughly investigated, in terms of ballisticity and the relationship between carrier velocity and mobility, where 1.6×-2× higher velocity than that in Si PFETs was confirmed. The effectiveness of the uniaxial stress to velocity enhancement as a performance booster was experimentally demonstrated in short channel regime. 1.4× higher drive current can be achieved by strained Ge PFET in ballistic regime.
ISSN:0743-1562
DOI:10.1109/VLSIT.2010.5556233