A computational study on the device performance of graphene nanoribbon heterojunction tunneling FETs based on bandgap engineering

The bandgap and the length of the heterojunction (HJ) region in the channel near the source play an important role in device performance of graphene nanoribbon heterojunction tunneling field-effect transistors (GNRHJ TFETs). In this work, we provide fundamental insights on the device physics for enh...

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Hauptverfasser:	Kai-Tak Lam, Haixia Da, Sai-Kong Chin, Samudra, G, Yee-Chia Yeo, Gengchiau Liang
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Doping Materials Nanoscale devices Optical wavelength conversion Performance evaluation Photonic band gap Tunneling
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