A computational study on the device performance of graphene nanoribbon heterojunction tunneling FETs based on bandgap engineering

A computational study on the device performance of graphene nanoribbon heterojunction tunneling FETs based on bandgap engineering

The bandgap and the length of the heterojunction (HJ) region in the channel near the source play an important role in device performance of graphene nanoribbon heterojunction tunneling field-effect transistors (GNRHJ TFETs). In this work, we provide fundamental insights on the device physics for enh...

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Bibliographische Detailangaben
Hauptverfasser: Kai-Tak Lam, Haixia Da, Sai-Kong Chin, Samudra, G, Yee-Chia Yeo, Gengchiau Liang
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Doping
Materials
Nanoscale devices
Optical wavelength conversion
Performance evaluation
Photonic band gap
Tunneling
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Beschreibung
Zusammenfassung:The bandgap and the length of the heterojunction (HJ) region in the channel near the source play an important role in device performance of graphene nanoribbon heterojunction tunneling field-effect transistors (GNRHJ TFETs). In this work, we provide fundamental insights on the device physics for enhancement of I ON /I OFF through fine-tuning of the HJ region.
ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2010.5551931