A computational study on the device performance of graphene nanoribbon heterojunction tunneling FETs based on bandgap engineering

A computational study on the device performance of graphene nanoribbon heterojunction tunneling FETs based on bandgap engineering

The bandgap and the length of the heterojunction (HJ) region in the channel near the source play an important role in device performance of graphene nanoribbon heterojunction tunneling field-effect transistors (GNRHJ TFETs). In this work, we provide fundamental insights on the device physics for enh...

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Hauptverfasser: Kai-Tak Lam, Haixia Da, Sai-Kong Chin, Samudra, G, Yee-Chia Yeo, Gengchiau Liang
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Doping
Materials
Nanoscale devices
Optical wavelength conversion
Performance evaluation
Photonic band gap
Tunneling
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creator Kai-Tak Lam
Haixia Da
Sai-Kong Chin
Samudra, G
Yee-Chia Yeo
Gengchiau Liang
description The bandgap and the length of the heterojunction (HJ) region in the channel near the source play an important role in device performance of graphene nanoribbon heterojunction tunneling field-effect transistors (GNRHJ TFETs). In this work, we provide fundamental insights on the device physics for enhancement of I ON /I OFF through fine-tuning of the HJ region.
doi_str_mv 10.1109/DRC.2010.5551931
format Conference Proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5551931</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5551931</ieee_id><sourcerecordid>5551931</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-eb4e630f1aa17cea22f9963557d61689e0d1f47d28bd1975a7de10f36d5f158a3</originalsourceid><addsrcrecordid>eNo1kEtrwzAQhNUXNE1zL_SiP-BUb1nHkD4hUCi5B9laOQqJbGS5kGP_eR2azmV32NnvMAg9UDKnlJin56_lnJHRSSmp4fQCzYwuqWBCKKm4vkQTpgQpVCn5Fbr7PzB6jSZUirLgWpNbNOv7HRklJBOGT9DPAtftoRuyzaGNdo_7PLgjbiPOW8AOvkMNuIPk23Swcdxbj5tkuy1EwNHGNoWqGtNbyJDa3RDrEwfnIUbYh9jg15d1jyvbgztBKxtdYzsMsQkRII2Je3Tj7b6H2XlO0Xr8Wb4Xq8-3j-ViVQRDcgGVAMWJp9ZSXYNlzBujuJTaKapKA8RRL7RjZeWo0dJqB5R4rpz0VJaWT9HjHzYAwKZL4WDTcXMuk_8CHIxmZw</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>A computational study on the device performance of graphene nanoribbon heterojunction tunneling FETs based on bandgap engineering</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Kai-Tak Lam ; Haixia Da ; Sai-Kong Chin ; Samudra, G ; Yee-Chia Yeo ; Gengchiau Liang</creator><creatorcontrib>Kai-Tak Lam ; Haixia Da ; Sai-Kong Chin ; Samudra, G ; Yee-Chia Yeo ; Gengchiau Liang</creatorcontrib><description>The bandgap and the length of the heterojunction (HJ) region in the channel near the source play an important role in device performance of graphene nanoribbon heterojunction tunneling field-effect transistors (GNRHJ TFETs). In this work, we provide fundamental insights on the device physics for enhancement of I ON /I OFF through fine-tuning of the HJ region.</description><identifier>ISSN: 1548-3770</identifier><identifier>ISBN: 1424465621</identifier><identifier>ISBN: 9781424465620</identifier><identifier>EISSN: 2640-6853</identifier><identifier>EISBN: 9781424465637</identifier><identifier>EISBN: 142446563X</identifier><identifier>EISBN: 9781424465644</identifier><identifier>EISBN: 1424465648</identifier><identifier>DOI: 10.1109/DRC.2010.5551931</identifier><language>eng</language><publisher>IEEE</publisher><subject>Doping ; Materials ; Nanoscale devices ; Optical wavelength conversion ; Performance evaluation ; Photonic band gap ; Tunneling</subject><ispartof>68th Device Research Conference, 2010, p.79-80</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5551931$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5551931$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kai-Tak Lam</creatorcontrib><creatorcontrib>Haixia Da</creatorcontrib><creatorcontrib>Sai-Kong Chin</creatorcontrib><creatorcontrib>Samudra, G</creatorcontrib><creatorcontrib>Yee-Chia Yeo</creatorcontrib><creatorcontrib>Gengchiau Liang</creatorcontrib><title>A computational study on the device performance of graphene nanoribbon heterojunction tunneling FETs based on bandgap engineering</title><title>68th Device Research Conference</title><addtitle>DRC</addtitle><description>The bandgap and the length of the heterojunction (HJ) region in the channel near the source play an important role in device performance of graphene nanoribbon heterojunction tunneling field-effect transistors (GNRHJ TFETs). In this work, we provide fundamental insights on the device physics for enhancement of I ON /I OFF through fine-tuning of the HJ region.</description><subject>Doping</subject><subject>Materials</subject><subject>Nanoscale devices</subject><subject>Optical wavelength conversion</subject><subject>Performance evaluation</subject><subject>Photonic band gap</subject><subject>Tunneling</subject><issn>1548-3770</issn><issn>2640-6853</issn><isbn>1424465621</isbn><isbn>9781424465620</isbn><isbn>9781424465637</isbn><isbn>142446563X</isbn><isbn>9781424465644</isbn><isbn>1424465648</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kEtrwzAQhNUXNE1zL_SiP-BUb1nHkD4hUCi5B9laOQqJbGS5kGP_eR2azmV32NnvMAg9UDKnlJin56_lnJHRSSmp4fQCzYwuqWBCKKm4vkQTpgQpVCn5Fbr7PzB6jSZUirLgWpNbNOv7HRklJBOGT9DPAtftoRuyzaGNdo_7PLgjbiPOW8AOvkMNuIPk23Swcdxbj5tkuy1EwNHGNoWqGtNbyJDa3RDrEwfnIUbYh9jg15d1jyvbgztBKxtdYzsMsQkRII2Je3Tj7b6H2XlO0Xr8Wb4Xq8-3j-ViVQRDcgGVAMWJp9ZSXYNlzBujuJTaKapKA8RRL7RjZeWo0dJqB5R4rpz0VJaWT9HjHzYAwKZL4WDTcXMuk_8CHIxmZw</recordid><startdate>201006</startdate><enddate>201006</enddate><creator>Kai-Tak Lam</creator><creator>Haixia Da</creator><creator>Sai-Kong Chin</creator><creator>Samudra, G</creator><creator>Yee-Chia Yeo</creator><creator>Gengchiau Liang</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201006</creationdate><title>A computational study on the device performance of graphene nanoribbon heterojunction tunneling FETs based on bandgap engineering</title><author>Kai-Tak Lam ; Haixia Da ; Sai-Kong Chin ; Samudra, G ; Yee-Chia Yeo ; Gengchiau Liang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-eb4e630f1aa17cea22f9963557d61689e0d1f47d28bd1975a7de10f36d5f158a3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Doping</topic><topic>Materials</topic><topic>Nanoscale devices</topic><topic>Optical wavelength conversion</topic><topic>Performance evaluation</topic><topic>Photonic band gap</topic><topic>Tunneling</topic><toplevel>online_resources</toplevel><creatorcontrib>Kai-Tak Lam</creatorcontrib><creatorcontrib>Haixia Da</creatorcontrib><creatorcontrib>Sai-Kong Chin</creatorcontrib><creatorcontrib>Samudra, G</creatorcontrib><creatorcontrib>Yee-Chia Yeo</creatorcontrib><creatorcontrib>Gengchiau Liang</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kai-Tak Lam</au><au>Haixia Da</au><au>Sai-Kong Chin</au><au>Samudra, G</au><au>Yee-Chia Yeo</au><au>Gengchiau Liang</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A computational study on the device performance of graphene nanoribbon heterojunction tunneling FETs based on bandgap engineering</atitle><btitle>68th Device Research Conference</btitle><stitle>DRC</stitle><date>2010-06</date><risdate>2010</risdate><spage>79</spage><epage>80</epage><pages>79-80</pages><issn>1548-3770</issn><eissn>2640-6853</eissn><isbn>1424465621</isbn><isbn>9781424465620</isbn><eisbn>9781424465637</eisbn><eisbn>142446563X</eisbn><eisbn>9781424465644</eisbn><eisbn>1424465648</eisbn><abstract>The bandgap and the length of the heterojunction (HJ) region in the channel near the source play an important role in device performance of graphene nanoribbon heterojunction tunneling field-effect transistors (GNRHJ TFETs). In this work, we provide fundamental insights on the device physics for enhancement of I ON /I OFF through fine-tuning of the HJ region.</abstract><pub>IEEE</pub><doi>10.1109/DRC.2010.5551931</doi><tpages>2</tpages></addata></record>
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Doping
Materials
Nanoscale devices
Optical wavelength conversion
Performance evaluation
Photonic band gap
Tunneling
title A computational study on the device performance of graphene nanoribbon heterojunction tunneling FETs based on bandgap engineering
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T05%3A41%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=A%20computational%20study%20on%20the%20device%20performance%20of%20graphene%20nanoribbon%20heterojunction%20tunneling%20FETs%20based%20on%20bandgap%20engineering&rft.btitle=68th%20Device%20Research%20Conference&rft.au=Kai-Tak%20Lam&rft.date=2010-06&rft.spage=79&rft.epage=80&rft.pages=79-80&rft.issn=1548-3770&rft.eissn=2640-6853&rft.isbn=1424465621&rft.isbn_list=9781424465620&rft_id=info:doi/10.1109/DRC.2010.5551931&rft_dat=%3Cieee_6IE%3E5551931%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781424465637&rft.eisbn_list=142446563X&rft.eisbn_list=9781424465644&rft.eisbn_list=1424465648&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5551931&rfr_iscdi=true