High performance 110 nm InGaAs/InP DHBTs in dry-etched in-situ refractory emitter contact technology

We report a 110 nm InP/In 0.53 Ga o.47 As/InP double heterojunction bipolar transistor (DHBT) demonstrating a simultaneous f t /f max 465/660 GHz and operating at power densities in excess of 50 mW/μm 2 . To our knowledge this is the smallest junction width reported for a III-V DHBT. The narrow 110...

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Hauptverfasser:	Jain, Vibhor, Lobisser, Evan, Baraskar, Ashish, Thibeault, Brian J, Rodwell, Mark, Griffith, Z, Urteaga, M, Bartsch, S T, Loubychev, D, Snyder, A, Wu, Y, Fastenau, J M, Liu, W K
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Density measurement Radio frequency
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