High performance 110 nm InGaAs/InP DHBTs in dry-etched in-situ refractory emitter contact technology

We report a 110 nm InP/In 0.53 Ga o.47 As/InP double heterojunction bipolar transistor (DHBT) demonstrating a simultaneous f t /f max 465/660 GHz and operating at power densities in excess of 50 mW/μm 2 . To our knowledge this is the smallest junction width reported for a III-V DHBT. The narrow 110 nm emitter junction permits the devices to be biased simultaneously at high voltages and high current densities (Je) with peak RF performance at 41 mW/μm2 (Je = 23.6 mA/μm2, Vce = 1.75 V). Devices incorporate low contact resistance, refractory, in-situ Mo emitter contact to a highly doped, regrown InGaAs cap. A low stress, sputter deposited, refractory, dry-etched W/Tio.ιWo.9 emitter metal process was developed demonstrating both high emitter yield and scalability to sub-100 nm junctions. The emitter metal contacts reported here are 100 nm wide and the emitter-base junction width is 110 nm. On-wafer Through-Reflect-Line (TRL) calibration structures were used to measure the RF performance of devices from 140 -180 GHz.