III-V FET channel designs for high current densities and thin inversion layers

III-V FETs are being developed for potential application in 0.3-3 THz systems and VLSI. To increase bandwidth, we must increase the drive current I d = qn s v inj W g per unit gate width W g , requiring both high sheet carrier concentrations n s and high injection velocities v inj . Present III-V NFETs restrict control region transport to the single isotropic Γ band minimum. As the gate dielectric is thinned, I d becomes limited by the effective mass m*, and is only increased by using materials with increased m* and hence increased transit times. The deep wavefunction also makes Γ-valley transport in low-m* materials unsuitable for