New phenomena for the Lifetime Prediction of TANOS-based Charge Trap NAND Flash Memory

New phenomena for the Lifetime Prediction of TANOS-based Charge Trap NAND Flash Memory

In this paper, the data retention characteristics of the charge trap flash (CTF) memory are evaluated and new findings to predict its lifetime more accurately are reported. In addition, the unique charge loss behavior of CTF memory cell is explained in terms of charge loss paths.

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Bibliographische Detailangaben
Hauptverfasser: Juhyung Kim, Changseok Kang, Sung-Il Chang, Jongyeon Kim, Younseok Jeong, Chan Park, Joo-Heon Kang, Sang-Hoon Kim, Sunkyu Hwang, Byeong-In Choe, Jintaek Park, Juhyuck Chung, Youngwoo Park, Jungdal Choi, Chilhee Chung
Format: Tagungsbericht
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:In this paper, the data retention characteristics of the charge trap flash (CTF) memory are evaluated and new findings to predict its lifetime more accurately are reported. In addition, the unique charge loss behavior of CTF memory cell is explained in terms of charge loss paths.
ISSN:1548-3770
2640-6853
DOI:10.1109/DRC.2010.5551854