Study on pH sensing properties of RF magnetron sputtered tantalum pentoxide (Ta2O5) thin film
The pH-sensing properties of tantalum pentoxide (Ta 2 O 5 ) film deposited by RF magnetron reactive sputtering method is demonstrated. The tantalum pentoxide film on silicon wafer samples were characterized by capacitance-voltage (C-V) measurements. The samples were annealed in ambient condition at...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng ; jpn |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 78 |
|---|---|
| container_issue | |
| container_start_page | 76 |
| container_title | |
| container_volume | |
| creator | Bahari, N Zain, A M Abdullah, A Z Sheng, D B C Othman, M |
| description | The pH-sensing properties of tantalum pentoxide (Ta 2 O 5 ) film deposited by RF magnetron reactive sputtering method is demonstrated. The tantalum pentoxide film on silicon wafer samples were characterized by capacitance-voltage (C-V) measurements. The samples were annealed in ambient condition at 400°C for several hours. High frequency C-V measurements were performed on the wafer samples at pH levels of 4, 7 and 10. Results obtained from the C-V measurements showed good linearity in the selected pH range. The pH sensitivity has reached 62mV/pH, which is better than the theoretical Nernst potential. |
| doi_str_mv | 10.1109/SMELEC.2010.5549429 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5549429</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5549429</ieee_id><sourcerecordid>5549429</sourcerecordid><originalsourceid>FETCH-LOGICAL-i156t-2eb4a474bcd0d5a9fc95745bb22b9484c1cd0ad056250cfd8ac6acc88bc2f9683</originalsourceid><addsrcrecordid>eNo1UM1LwzAcjYigzv4Fu-Soh80kS9LkKGMfQmXg5lFGmvw6I21amhTcf2_B-S6P98E7PISmlMwpJfp5_7YqVss5I6MhBNec6St0TznjXEqi6TXKdK7-tRK3KIvxm4zggkmp79DnPg3ujNuAuy2OEKIPJ9z1bQd98hBxW-H3NW7MKUDqx1bshpSgB4eTCcnUQ4M7CKn98Q7w48GwnXjC6csHXPm6eUA3lakjZBeeoI_16rDczord5nX5Usw8FTLNGJTc8JyX1hEnjK6sFjkXZclYqbnilo6BcURIJoitnDJWGmuVKi2rtFSLCZr-7XoAOHa9b0x_Pl4eWfwCyYZV5Q</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Study on pH sensing properties of RF magnetron sputtered tantalum pentoxide (Ta2O5) thin film</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Bahari, N ; Zain, A M ; Abdullah, A Z ; Sheng, D B C ; Othman, M</creator><creatorcontrib>Bahari, N ; Zain, A M ; Abdullah, A Z ; Sheng, D B C ; Othman, M</creatorcontrib><description>The pH-sensing properties of tantalum pentoxide (Ta 2 O 5 ) film deposited by RF magnetron reactive sputtering method is demonstrated. The tantalum pentoxide film on silicon wafer samples were characterized by capacitance-voltage (C-V) measurements. The samples were annealed in ambient condition at 400°C for several hours. High frequency C-V measurements were performed on the wafer samples at pH levels of 4, 7 and 10. Results obtained from the C-V measurements showed good linearity in the selected pH range. The pH sensitivity has reached 62mV/pH, which is better than the theoretical Nernst potential.</description><identifier>ISBN: 9781424466085</identifier><identifier>ISBN: 1424466083</identifier><identifier>EISBN: 1424466091</identifier><identifier>EISBN: 9781424466092</identifier><identifier>EISBN: 9781424466078</identifier><identifier>EISBN: 1424466075</identifier><identifier>DOI: 10.1109/SMELEC.2010.5549429</identifier><language>eng ; jpn</language><publisher>IEEE</publisher><subject>Annealing ; Capacitance measurement ; Capacitance-voltage characteristics ; Frequency measurement ; Magnetic properties ; Performance evaluation ; pH-ISFET ; Radio frequency ; RF magnetron sputtering ; Semiconductor films ; sensing membrane ; Silicon ; Sputtering ; Tantalum pentoxide</subject><ispartof>2010 IEEE International Conference on Semiconductor Electronics (ICSE2010), 2010, p.76-78</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5549429$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,777,781,786,787,2052,27906,54901</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5549429$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Bahari, N</creatorcontrib><creatorcontrib>Zain, A M</creatorcontrib><creatorcontrib>Abdullah, A Z</creatorcontrib><creatorcontrib>Sheng, D B C</creatorcontrib><creatorcontrib>Othman, M</creatorcontrib><title>Study on pH sensing properties of RF magnetron sputtered tantalum pentoxide (Ta2O5) thin film</title><title>2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)</title><addtitle>SMELEC</addtitle><description>The pH-sensing properties of tantalum pentoxide (Ta 2 O 5 ) film deposited by RF magnetron reactive sputtering method is demonstrated. The tantalum pentoxide film on silicon wafer samples were characterized by capacitance-voltage (C-V) measurements. The samples were annealed in ambient condition at 400°C for several hours. High frequency C-V measurements were performed on the wafer samples at pH levels of 4, 7 and 10. Results obtained from the C-V measurements showed good linearity in the selected pH range. The pH sensitivity has reached 62mV/pH, which is better than the theoretical Nernst potential.</description><subject>Annealing</subject><subject>Capacitance measurement</subject><subject>Capacitance-voltage characteristics</subject><subject>Frequency measurement</subject><subject>Magnetic properties</subject><subject>Performance evaluation</subject><subject>pH-ISFET</subject><subject>Radio frequency</subject><subject>RF magnetron sputtering</subject><subject>Semiconductor films</subject><subject>sensing membrane</subject><subject>Silicon</subject><subject>Sputtering</subject><subject>Tantalum pentoxide</subject><isbn>9781424466085</isbn><isbn>1424466083</isbn><isbn>1424466091</isbn><isbn>9781424466092</isbn><isbn>9781424466078</isbn><isbn>1424466075</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1UM1LwzAcjYigzv4Fu-Soh80kS9LkKGMfQmXg5lFGmvw6I21amhTcf2_B-S6P98E7PISmlMwpJfp5_7YqVss5I6MhBNec6St0TznjXEqi6TXKdK7-tRK3KIvxm4zggkmp79DnPg3ujNuAuy2OEKIPJ9z1bQd98hBxW-H3NW7MKUDqx1bshpSgB4eTCcnUQ4M7CKn98Q7w48GwnXjC6csHXPm6eUA3lakjZBeeoI_16rDczord5nX5Usw8FTLNGJTc8JyX1hEnjK6sFjkXZclYqbnilo6BcURIJoitnDJWGmuVKi2rtFSLCZr-7XoAOHa9b0x_Pl4eWfwCyYZV5Q</recordid><startdate>201006</startdate><enddate>201006</enddate><creator>Bahari, N</creator><creator>Zain, A M</creator><creator>Abdullah, A Z</creator><creator>Sheng, D B C</creator><creator>Othman, M</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201006</creationdate><title>Study on pH sensing properties of RF magnetron sputtered tantalum pentoxide (Ta2O5) thin film</title><author>Bahari, N ; Zain, A M ; Abdullah, A Z ; Sheng, D B C ; Othman, M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i156t-2eb4a474bcd0d5a9fc95745bb22b9484c1cd0ad056250cfd8ac6acc88bc2f9683</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng ; jpn</language><creationdate>2010</creationdate><topic>Annealing</topic><topic>Capacitance measurement</topic><topic>Capacitance-voltage characteristics</topic><topic>Frequency measurement</topic><topic>Magnetic properties</topic><topic>Performance evaluation</topic><topic>pH-ISFET</topic><topic>Radio frequency</topic><topic>RF magnetron sputtering</topic><topic>Semiconductor films</topic><topic>sensing membrane</topic><topic>Silicon</topic><topic>Sputtering</topic><topic>Tantalum pentoxide</topic><toplevel>online_resources</toplevel><creatorcontrib>Bahari, N</creatorcontrib><creatorcontrib>Zain, A M</creatorcontrib><creatorcontrib>Abdullah, A Z</creatorcontrib><creatorcontrib>Sheng, D B C</creatorcontrib><creatorcontrib>Othman, M</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bahari, N</au><au>Zain, A M</au><au>Abdullah, A Z</au><au>Sheng, D B C</au><au>Othman, M</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Study on pH sensing properties of RF magnetron sputtered tantalum pentoxide (Ta2O5) thin film</atitle><btitle>2010 IEEE International Conference on Semiconductor Electronics (ICSE2010)</btitle><stitle>SMELEC</stitle><date>2010-06</date><risdate>2010</risdate><spage>76</spage><epage>78</epage><pages>76-78</pages><isbn>9781424466085</isbn><isbn>1424466083</isbn><eisbn>1424466091</eisbn><eisbn>9781424466092</eisbn><eisbn>9781424466078</eisbn><eisbn>1424466075</eisbn><abstract>The pH-sensing properties of tantalum pentoxide (Ta 2 O 5 ) film deposited by RF magnetron reactive sputtering method is demonstrated. The tantalum pentoxide film on silicon wafer samples were characterized by capacitance-voltage (C-V) measurements. The samples were annealed in ambient condition at 400°C for several hours. High frequency C-V measurements were performed on the wafer samples at pH levels of 4, 7 and 10. Results obtained from the C-V measurements showed good linearity in the selected pH range. The pH sensitivity has reached 62mV/pH, which is better than the theoretical Nernst potential.</abstract><pub>IEEE</pub><doi>10.1109/SMELEC.2010.5549429</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 9781424466085 |
| ispartof | 2010 IEEE International Conference on Semiconductor Electronics (ICSE2010), 2010, p.76-78 |
| issn | |
| language | eng ; jpn |
| recordid | cdi_ieee_primary_5549429 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Annealing Capacitance measurement Capacitance-voltage characteristics Frequency measurement Magnetic properties Performance evaluation pH-ISFET Radio frequency RF magnetron sputtering Semiconductor films sensing membrane Silicon Sputtering Tantalum pentoxide |
| title | Study on pH sensing properties of RF magnetron sputtered tantalum pentoxide (Ta2O5) thin film |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-18T00%3A49%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Study%20on%20pH%20sensing%20properties%20of%20RF%20magnetron%20sputtered%20tantalum%20pentoxide%20(Ta2O5)%20thin%20film&rft.btitle=2010%20IEEE%20International%20Conference%20on%20Semiconductor%20Electronics%20(ICSE2010)&rft.au=Bahari,%20N&rft.date=2010-06&rft.spage=76&rft.epage=78&rft.pages=76-78&rft.isbn=9781424466085&rft.isbn_list=1424466083&rft_id=info:doi/10.1109/SMELEC.2010.5549429&rft_dat=%3Cieee_6IE%3E5549429%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=1424466091&rft.eisbn_list=9781424466092&rft.eisbn_list=9781424466078&rft.eisbn_list=1424466075&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5549429&rfr_iscdi=true |