Study on pH sensing properties of RF magnetron sputtered tantalum pentoxide (Ta2O5) thin film

The pH-sensing properties of tantalum pentoxide (Ta 2 O 5 ) film deposited by RF magnetron reactive sputtering method is demonstrated. The tantalum pentoxide film on silicon wafer samples were characterized by capacitance-voltage (C-V) measurements. The samples were annealed in ambient condition at...

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Hauptverfasser:	Bahari, N, Zain, A M, Abdullah, A Z, Sheng, D B C, Othman, M
Format:	Tagungsbericht
Sprache:	eng ; jpn
Schlagworte:	Annealing Capacitance measurement Capacitance-voltage characteristics Frequency measurement Magnetic properties Performance evaluation pH-ISFET Radio frequency RF magnetron sputtering Semiconductor films sensing membrane Silicon Sputtering Tantalum pentoxide
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Zusammenfassung:	The pH-sensing properties of tantalum pentoxide (Ta 2 O 5 ) film deposited by RF magnetron reactive sputtering method is demonstrated. The tantalum pentoxide film on silicon wafer samples were characterized by capacitance-voltage (C-V) measurements. The samples were annealed in ambient condition at 400°C for several hours. High frequency C-V measurements were performed on the wafer samples at pH levels of 4, 7 and 10. Results obtained from the C-V measurements showed good linearity in the selected pH range. The pH sensitivity has reached 62mV/pH, which is better than the theoretical Nernst potential.
DOI:	10.1109/SMELEC.2010.5549429