Temperature dependence of the detected voltage of planar microwave diode that operation is based on carrier heating phenomena in strong electric field

In this report we present results of theoretical and experimental investigation of the detected voltage in a constricted n-n + junction of heavily doped GaAs sheets in a wide temperature range under the action of f= 65.34 GHz microwave radiation. The planar microwave diodes were fabricated on the base of MBE heavily doped structures: (i) 100 nm thick surface n-GaAs layer (sample 112); (ii) 5 delta-doped n-GaAs layers separated by 25 nm intrinsic i-GaAs; (iii) 100 nm thick surface n-Al 0.3 Ga 0.7 As layer.