Monolithic 40-GHz Passively Mode-Locked AlGaInAs-InP 1.55- \mum MQW Laser With Surface-Etched Distributed Bragg Reflector
We have fabricated 40-GHz passively mode-locked AlGaInAs-InP 1.55- lasers integrated with surface-etched distributed Bragg mirrors. Numerically optimized gratings provide low-scattering losses and accurate wavelength control. The lasers produce 4.46-ps Gaussian pulses with time-bandwidth product of...
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| Veröffentlicht in: | IEEE photonics technology letters 2010-10, Vol.22 (20), p.1503-1505 |
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| container_issue | 20 |
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| container_title | IEEE photonics technology letters |
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| creator | Lianping Hou Dylewicz, R Haji, M Stolarz, P Bocang Qiu Bryce, A C |
| description | We have fabricated 40-GHz passively mode-locked AlGaInAs-InP 1.55- lasers integrated with surface-etched distributed Bragg mirrors. Numerically optimized gratings provide low-scattering losses and accurate wavelength control. The lasers produce 4.46-ps Gaussian pulses with time-bandwidth product of 0.47. |
| doi_str_mv | 10.1109/LPT.2010.2064764 |
| format | Article |
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The lasers produce 4.46-ps Gaussian pulses with time-bandwidth product of 0.47.</description><subject>AlGaInAs-InP material</subject><subject>Distributed Bragg reflectors</subject><subject>Dry etching</subject><subject>Gratings</subject><subject>Indium phosphide</subject><subject>Laser mode locking</subject><subject>Masers</subject><subject>mode-locked laser</subject><subject>monolithic integrated circuits</subject><subject>Optical surface waves</subject><subject>Quantum well devices</subject><subject>Semiconductor lasers</subject><subject>Surface emitting lasers</subject><subject>surface-etched distributed Bragg reflector</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9jkFLAzEUhIMoWKt3wcv7A1mTbrKlx6q1LezCVgu9CCWmb9todiNJVlh_vTl49jTfMMwwhNxylnHOZvdlvc0mLLkJK8S0EGdkxGeCU8an4jwxS8x5Li_JVQgfjHEhczEiQ-U6Z008GQ2C0eXqB2oVgvlGO0DlDkhLpz_xAHO7VOtuHui6q4FnUlJ4a_sWqs0OShXQwy6twGvvG6WRLqI-pdaTCdGb9z4mfvDqeIQXbCzq6Pw1uWiUDXjzp2Ny97zYPq6oQcT9lzet8sNeyvSzyPP_01_2Yksr</recordid><startdate>20101015</startdate><enddate>20101015</enddate><creator>Lianping Hou</creator><creator>Dylewicz, R</creator><creator>Haji, M</creator><creator>Stolarz, P</creator><creator>Bocang Qiu</creator><creator>Bryce, A C</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope></search><sort><creationdate>20101015</creationdate><title>Monolithic 40-GHz Passively Mode-Locked AlGaInAs-InP 1.55- \mum MQW Laser With Surface-Etched Distributed Bragg Reflector</title><author>Lianping Hou ; Dylewicz, R ; Haji, M ; Stolarz, P ; Bocang Qiu ; Bryce, A C</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_55453633</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>AlGaInAs-InP material</topic><topic>Distributed Bragg reflectors</topic><topic>Dry etching</topic><topic>Gratings</topic><topic>Indium phosphide</topic><topic>Laser mode locking</topic><topic>Masers</topic><topic>mode-locked laser</topic><topic>monolithic integrated circuits</topic><topic>Optical surface waves</topic><topic>Quantum well devices</topic><topic>Semiconductor lasers</topic><topic>Surface emitting lasers</topic><topic>surface-etched distributed Bragg reflector</topic><toplevel>online_resources</toplevel><creatorcontrib>Lianping Hou</creatorcontrib><creatorcontrib>Dylewicz, R</creatorcontrib><creatorcontrib>Haji, M</creatorcontrib><creatorcontrib>Stolarz, P</creatorcontrib><creatorcontrib>Bocang Qiu</creatorcontrib><creatorcontrib>Bryce, A C</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE/IET Electronic Library (IEL)</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lianping Hou</au><au>Dylewicz, R</au><au>Haji, M</au><au>Stolarz, P</au><au>Bocang Qiu</au><au>Bryce, A C</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Monolithic 40-GHz Passively Mode-Locked AlGaInAs-InP 1.55- \mum MQW Laser With Surface-Etched Distributed Bragg Reflector</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>2010-10-15</date><risdate>2010</risdate><volume>22</volume><issue>20</issue><spage>1503</spage><epage>1505</epage><pages>1503-1505</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>We have fabricated 40-GHz passively mode-locked AlGaInAs-InP 1.55- lasers integrated with surface-etched distributed Bragg mirrors. 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| ispartof | IEEE photonics technology letters, 2010-10, Vol.22 (20), p.1503-1505 |
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| subjects | AlGaInAs-InP material Distributed Bragg reflectors Dry etching Gratings Indium phosphide Laser mode locking Masers mode-locked laser monolithic integrated circuits Optical surface waves Quantum well devices Semiconductor lasers Surface emitting lasers surface-etched distributed Bragg reflector |
| title | Monolithic 40-GHz Passively Mode-Locked AlGaInAs-InP 1.55- \mum MQW Laser With Surface-Etched Distributed Bragg Reflector |
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