$Monolithic 40-GHz Passively Mode-Locked AlGaInAs-InP 1.55- \mum MQW Laser With Surface-Etched Distributed Bragg Reflector$

Monolithic 40-GHz Passively Mode-Locked AlGaInAs-InP 1.55- \mum MQW Laser With Surface-Etched Distributed Bragg Reflector

We have fabricated 40-GHz passively mode-locked AlGaInAs-InP 1.55- lasers integrated with surface-etched distributed Bragg mirrors. Numerically optimized gratings provide low-scattering losses and accurate wavelength control. The lasers produce 4.46-ps Gaussian pulses with time-bandwidth product of...

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Veröffentlicht in:	IEEE photonics technology letters 2010-10, Vol.22 (20), p.1503-1505
Hauptverfasser:	Lianping Hou, Dylewicz, R, Haji, M, Stolarz, P, Bocang Qiu, Bryce, A C
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaInAs-InP material Distributed Bragg reflectors Dry etching Gratings Indium phosphide Laser mode locking Masers mode-locked laser monolithic integrated circuits Optical surface waves Quantum well devices Semiconductor lasers Surface emitting lasers surface-etched distributed Bragg reflector
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Zusammenfassung:	We have fabricated 40-GHz passively mode-locked AlGaInAs-InP 1.55- lasers integrated with surface-etched distributed Bragg mirrors. Numerically optimized gratings provide low-scattering losses and accurate wavelength control. The lasers produce 4.46-ps Gaussian pulses with time-bandwidth product of 0.47.
ISSN:	1041-1135 1941-0174
DOI:	10.1109/LPT.2010.2064764