A study of the bonding-wire reliability on the chip surface electrode in IGBT

A study of the bonding-wire reliability on the chip surface electrode in IGBT

The reliability of IGBT chip surface electrode for bonding-wires is described. The power cycling (P/C) capability of an IGBT module is improved due to a suppression of chip surface aluminum (Al) electrode degradation with Nickel (Ni) plating. The P/C capability obtained with the Ni plating electrode...

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Bibliographische Detailangaben
Hauptverfasser: Ikeda, Y, Hokazono, H, Sakaf, S, Nishimura, T, Takahashi, Y
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bonding
Copper
Electrodes
Insulated gate bipolar transistors
Motor drives
Power semiconductor devices
Solar energy
Temperature
Testing
Traction power supplies
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Beschreibung
Zusammenfassung:The reliability of IGBT chip surface electrode for bonding-wires is described. The power cycling (P/C) capability of an IGBT module is improved due to a suppression of chip surface aluminum (Al) electrode degradation with Nickel (Ni) plating. The P/C capability obtained with the Ni plating electrode is about 3 times higher than that with the Al electrode at a high temperature condition. Such a good performance comes from the barrier property of the Ni plating layer.
ISSN:1063-6854
1946-0201