Analysis of technological concerns on electrical characteristics of SOI power LUDMOS transistors

Analysis of technological concerns on electrical characteristics of SOI power LUDMOS transistors

This paper is focused on the optimization design of 150 V power LDMOS transistors with the purpose of being integrated in a new generation of Smart-Power technology based upon a 0.18μm SOI-CMOS technology. Different structure parameters, such as the STI length, the N-well doping profile and the rela...

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Bibliographische Detailangaben
Hauptverfasser: Toulon, G, Cortés, I, Morancho, F, Hugonnard-Bruyere, E, Villard, B, Toren, W J
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Breakdown voltage
CMOS technology
Design optimization
Doping profiles
Electric variables
Oxidation
Paper technology
Semiconductor optical amplifiers
Solid modeling
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Zusammenfassung:This paper is focused on the optimization design of 150 V power LDMOS transistors with the purpose of being integrated in a new generation of Smart-Power technology based upon a 0.18μm SOI-CMOS technology. Different structure parameters, such as the STI length, the N-well doping profile and the relative position of the N-well mask to the STI are analyzed in terms of voltage capability, specific on-state resistance and safe operating area.
ISSN:1063-6854
1946-0201