Design of stable 700V Lateral MOSFET for new generation, low-cost off-line SMPS

Design of 700V Lateral MOSFET integrated in a BiCMOS process has been optimized to improve the stability of its on-state characteristics during lifetime stress. This has enabled new generation off-line SMPS ICs with primary side feedback that has much higher level of system integration compared to e...

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Hauptverfasser: Banerjee, S, Parthasarathy, V, Manley, M
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:Design of 700V Lateral MOSFET integrated in a BiCMOS process has been optimized to improve the stability of its on-state characteristics during lifetime stress. This has enabled new generation off-line SMPS ICs with primary side feedback that has much higher level of system integration compared to earlier generation products.
ISSN:1063-6854
1946-0201