A new 8V - 60V rated low Vgs NLDMOS structure with enhanced specific on-resistance

A new 8V - 60V rated low Vgs NLDMOS structure with enhanced specific on-resistance

We present a new 0.35um BCDMOS technology with a capability of 8 to 60V NLDMOS. The proposed process do not need level shifter, charge pump and boost up due to the same gate oxide thickness with logic 5V CMOS. And the Rsp of the proposed 24V NLDMOS structure is lower by 46% than conventional structu...

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Hauptverfasser: Choul-Joo Ko, Cheol-Ho Cho, Hee-Bae Lee, Yong-Jun Lee, Min-Woo Kim, Sun-Kyung Bang, Han-Geon Kim, Jae-O Lee, Sang-Chul Shim, Sun Kyoung Kang, Nam-Joo Kim, Kwang-Dong Yoo, Hutter, L N
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Charge pumps
CMOS integrated circuits
CMOS logic circuits
CMOS process
CMOS technology
Doping
Driver circuits
Implants
Power semiconductor devices
Voltage
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Beschreibung
Zusammenfassung:We present a new 0.35um BCDMOS technology with a capability of 8 to 60V NLDMOS. The proposed process do not need level shifter, charge pump and boost up due to the same gate oxide thickness with logic 5V CMOS. And the Rsp of the proposed 24V NLDMOS structure is lower by 46% than conventional structure. The process has no thermal budget modification but use simple additional implant step. Also it is compatible with the conventional BCDMOS. The power LDMOS transistors in the process have very competitive performances with NLDMOS in 0.15 - 0.25um BCDMOS technologies.
ISSN:1063-6854
1946-0201