A comparison of indium migration in the MBE growth of SQW InGaAs-GaAs-AlGaAs lasers on patterned substrates using As/sub 2/ and As/sub 4
The migration of indium on patterned substrates during MBE growth is found to be strongly dependent upon the arsenic species used. InGaAs-GaAs SQW lasers grown on narrow mesas using AS/sub 4/ exhibited 70-meV redshifts, while those grown using As/sub 2/ showed only small redshifts.
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| creator | Dion, M. Gupta, V.K. Wasilewski, Z.R. Norman, C.E. Pratt, A.R. Chow-Chong, P. Williams, R.L. |
| description | The migration of indium on patterned substrates during MBE growth is found to be strongly dependent upon the arsenic species used. InGaAs-GaAs SQW lasers grown on narrow mesas using AS/sub 4/ exhibited 70-meV redshifts, while those grown using As/sub 2/ showed only small redshifts. |
| doi_str_mv | 10.1109/ISLC.1996.553768 |
| format | Conference Proceeding |
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InGaAs-GaAs SQW lasers grown on narrow mesas using AS/sub 4/ exhibited 70-meV redshifts, while those grown using As/sub 2/ showed only small redshifts.</abstract><pub>IEEE</pub><doi>10.1109/ISLC.1996.553768</doi></addata></record> |
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| identifier | ISBN: 078033163X |
| ispartof | Conference Digest. 15th IEEE International Semiconductor Laser Conference, 1996, p.103-104 |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Educational institutions Etching Gallium arsenide Indium gallium arsenide Laser theory Materials science and technology Molecular beam epitaxial growth Photonic band gap Semiconductor materials Substrates |
| title | A comparison of indium migration in the MBE growth of SQW InGaAs-GaAs-AlGaAs lasers on patterned substrates using As/sub 2/ and As/sub 4 |
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