A comparison of indium migration in the MBE growth of SQW InGaAs-GaAs-AlGaAs lasers on patterned substrates using As/sub 2/ and As/sub 4

The migration of indium on patterned substrates during MBE growth is found to be strongly dependent upon the arsenic species used. InGaAs-GaAs SQW lasers grown on narrow mesas using AS/sub 4/ exhibited 70-meV redshifts, while those grown using As/sub 2/ showed only small redshifts.

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Bibliographische Detailangaben
Hauptverfasser:	Dion, M., Gupta, V.K., Wasilewski, Z.R., Norman, C.E., Pratt, A.R., Chow-Chong, P., Williams, R.L.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Educational institutions Etching Gallium arsenide Indium gallium arsenide Laser theory Materials science and technology Molecular beam epitaxial growth Photonic band gap Semiconductor materials Substrates
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Beschreibung
Zusammenfassung:	The migration of indium on patterned substrates during MBE growth is found to be strongly dependent upon the arsenic species used. InGaAs-GaAs SQW lasers grown on narrow mesas using AS/sub 4/ exhibited 70-meV redshifts, while those grown using As/sub 2/ showed only small redshifts.
DOI:	10.1109/ISLC.1996.553768