1.3 /spl mu/m high T/sub 0/ strained MQW laser with AlGaInAs SCH layers on a hetero-epitaxial InGaAs buffer layer
The 1.3 /spl mu/m InGaP clad laser with AlGaInAs SCH layer was fabricated on a hetero-epitaxial InGaAs QW buffer layer. Due to high optical confinement, this laser showed a high characteristic temperature T/sub 0/ of 110 K.
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 72 |
|---|---|
| container_issue | |
| container_start_page | 71 |
| container_title | |
| container_volume | |
| creator | Kurakake, H. Uchida, T. Higashi, T. Ogita, S. Kobayashi, M. |
| description | The 1.3 /spl mu/m InGaP clad laser with AlGaInAs SCH layer was fabricated on a hetero-epitaxial InGaAs QW buffer layer. Due to high optical confinement, this laser showed a high characteristic temperature T/sub 0/ of 110 K. |
| doi_str_mv | 10.1109/ISLC.1996.553753 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_553753</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>553753</ieee_id><sourcerecordid>553753</sourcerecordid><originalsourceid>FETCH-ieee_primary_5537533</originalsourceid><addsrcrecordid>eNp9jk9rwkAUxBdKof-8S0_vC5jdZRtjjhKsBuyhRNCbPPHFbNnEuC-h-u1dqufOZWB-MzBCDLWKtFapzItlFuk0HUdxbJLYPIgXlUyUMXpsNk9iwPyjgj4CVcmzOOnIgOTWQd3LGip7qGAlud-BksCdR9vQHr6-1-CQycOv7SqYujnmzZShyBYhv5BnODaAUFFH_jii1nZ4tuggb-YYeru-LMP4r_omHkt0TIO7v4r3z9kqW4wsEW1bb2v0l-3tvPkXXgHBBEbT</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>1.3 /spl mu/m high T/sub 0/ strained MQW laser with AlGaInAs SCH layers on a hetero-epitaxial InGaAs buffer layer</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Kurakake, H. ; Uchida, T. ; Higashi, T. ; Ogita, S. ; Kobayashi, M.</creator><creatorcontrib>Kurakake, H. ; Uchida, T. ; Higashi, T. ; Ogita, S. ; Kobayashi, M.</creatorcontrib><description>The 1.3 /spl mu/m InGaP clad laser with AlGaInAs SCH layer was fabricated on a hetero-epitaxial InGaAs QW buffer layer. Due to high optical confinement, this laser showed a high characteristic temperature T/sub 0/ of 110 K.</description><identifier>ISBN: 078033163X</identifier><identifier>ISBN: 9780780331631</identifier><identifier>DOI: 10.1109/ISLC.1996.553753</identifier><language>eng</language><publisher>IEEE</publisher><subject>Buffer layers ; Indium gallium arsenide ; Optical buffering ; Optical refraction ; Optical variables control ; Optical waveguides ; Photonic band gap ; Quantum well devices ; Temperature ; Waveguide lasers</subject><ispartof>Conference Digest. 15th IEEE International Semiconductor Laser Conference, 1996, p.71-72</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/553753$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2051,4035,4036,27904,54898</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/553753$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kurakake, H.</creatorcontrib><creatorcontrib>Uchida, T.</creatorcontrib><creatorcontrib>Higashi, T.</creatorcontrib><creatorcontrib>Ogita, S.</creatorcontrib><creatorcontrib>Kobayashi, M.</creatorcontrib><title>1.3 /spl mu/m high T/sub 0/ strained MQW laser with AlGaInAs SCH layers on a hetero-epitaxial InGaAs buffer layer</title><title>Conference Digest. 15th IEEE International Semiconductor Laser Conference</title><addtitle>ISLC</addtitle><description>The 1.3 /spl mu/m InGaP clad laser with AlGaInAs SCH layer was fabricated on a hetero-epitaxial InGaAs QW buffer layer. Due to high optical confinement, this laser showed a high characteristic temperature T/sub 0/ of 110 K.</description><subject>Buffer layers</subject><subject>Indium gallium arsenide</subject><subject>Optical buffering</subject><subject>Optical refraction</subject><subject>Optical variables control</subject><subject>Optical waveguides</subject><subject>Photonic band gap</subject><subject>Quantum well devices</subject><subject>Temperature</subject><subject>Waveguide lasers</subject><isbn>078033163X</isbn><isbn>9780780331631</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1996</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jk9rwkAUxBdKof-8S0_vC5jdZRtjjhKsBuyhRNCbPPHFbNnEuC-h-u1dqufOZWB-MzBCDLWKtFapzItlFuk0HUdxbJLYPIgXlUyUMXpsNk9iwPyjgj4CVcmzOOnIgOTWQd3LGip7qGAlud-BksCdR9vQHr6-1-CQycOv7SqYujnmzZShyBYhv5BnODaAUFFH_jii1nZ4tuggb-YYeru-LMP4r_omHkt0TIO7v4r3z9kqW4wsEW1bb2v0l-3tvPkXXgHBBEbT</recordid><startdate>1996</startdate><enddate>1996</enddate><creator>Kurakake, H.</creator><creator>Uchida, T.</creator><creator>Higashi, T.</creator><creator>Ogita, S.</creator><creator>Kobayashi, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1996</creationdate><title>1.3 /spl mu/m high T/sub 0/ strained MQW laser with AlGaInAs SCH layers on a hetero-epitaxial InGaAs buffer layer</title><author>Kurakake, H. ; Uchida, T. ; Higashi, T. ; Ogita, S. ; Kobayashi, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_5537533</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Buffer layers</topic><topic>Indium gallium arsenide</topic><topic>Optical buffering</topic><topic>Optical refraction</topic><topic>Optical variables control</topic><topic>Optical waveguides</topic><topic>Photonic band gap</topic><topic>Quantum well devices</topic><topic>Temperature</topic><topic>Waveguide lasers</topic><toplevel>online_resources</toplevel><creatorcontrib>Kurakake, H.</creatorcontrib><creatorcontrib>Uchida, T.</creatorcontrib><creatorcontrib>Higashi, T.</creatorcontrib><creatorcontrib>Ogita, S.</creatorcontrib><creatorcontrib>Kobayashi, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kurakake, H.</au><au>Uchida, T.</au><au>Higashi, T.</au><au>Ogita, S.</au><au>Kobayashi, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>1.3 /spl mu/m high T/sub 0/ strained MQW laser with AlGaInAs SCH layers on a hetero-epitaxial InGaAs buffer layer</atitle><btitle>Conference Digest. 15th IEEE International Semiconductor Laser Conference</btitle><stitle>ISLC</stitle><date>1996</date><risdate>1996</risdate><spage>71</spage><epage>72</epage><pages>71-72</pages><isbn>078033163X</isbn><isbn>9780780331631</isbn><abstract>The 1.3 /spl mu/m InGaP clad laser with AlGaInAs SCH layer was fabricated on a hetero-epitaxial InGaAs QW buffer layer. Due to high optical confinement, this laser showed a high characteristic temperature T/sub 0/ of 110 K.</abstract><pub>IEEE</pub><doi>10.1109/ISLC.1996.553753</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 078033163X |
| ispartof | Conference Digest. 15th IEEE International Semiconductor Laser Conference, 1996, p.71-72 |
| issn | |
| language | eng |
| recordid | cdi_ieee_primary_553753 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Buffer layers Indium gallium arsenide Optical buffering Optical refraction Optical variables control Optical waveguides Photonic band gap Quantum well devices Temperature Waveguide lasers |
| title | 1.3 /spl mu/m high T/sub 0/ strained MQW laser with AlGaInAs SCH layers on a hetero-epitaxial InGaAs buffer layer |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-25T07%3A26%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=1.3%20/spl%20mu/m%20high%20T/sub%200/%20strained%20MQW%20laser%20with%20AlGaInAs%20SCH%20layers%20on%20a%20hetero-epitaxial%20InGaAs%20buffer%20layer&rft.btitle=Conference%20Digest.%2015th%20IEEE%20International%20Semiconductor%20Laser%20Conference&rft.au=Kurakake,%20H.&rft.date=1996&rft.spage=71&rft.epage=72&rft.pages=71-72&rft.isbn=078033163X&rft.isbn_list=9780780331631&rft_id=info:doi/10.1109/ISLC.1996.553753&rft_dat=%3Cieee_6IE%3E553753%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=553753&rfr_iscdi=true |