1.3 /spl mu/m high T/sub 0/ strained MQW laser with AlGaInAs SCH layers on a hetero-epitaxial InGaAs buffer layer

The 1.3 /spl mu/m InGaP clad laser with AlGaInAs SCH layer was fabricated on a hetero-epitaxial InGaAs QW buffer layer. Due to high optical confinement, this laser showed a high characteristic temperature T/sub 0/ of 110 K.

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Bibliographische Detailangaben
Hauptverfasser:	Kurakake, H., Uchida, T., Higashi, T., Ogita, S., Kobayashi, M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Buffer layers Indium gallium arsenide Optical buffering Optical refraction Optical variables control Optical waveguides Photonic band gap Quantum well devices Temperature Waveguide lasers
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Beschreibung
Zusammenfassung:	The 1.3 /spl mu/m InGaP clad laser with AlGaInAs SCH layer was fabricated on a hetero-epitaxial InGaAs QW buffer layer. Due to high optical confinement, this laser showed a high characteristic temperature T/sub 0/ of 110 K.
DOI:	10.1109/ISLC.1996.553753