Slurry engineering for self-stopping, dishing free SiO/sub 2/-CMP

A new type of slurry, in which much surfactant was added into a conventional CeO/sub 2/ slurry, was developed for SiO/sub 2/ chemical mechanical polishing (CMP). The new slurry has unique characteristics. Because the polishing rate drops as planarization progresses, polishing can stop automatically....

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Bibliographische Detailangaben

Hauptverfasser:	Nojo, H., Kodera, M., Nakata, R.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Artificial intelligence Automatic control Laboratories Microelectronics Planarization Polymers Semiconductor device manufacture Slurries Thickness control Wiring
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