Slurry engineering for self-stopping, dishing free SiO/sub 2/-CMP

Slurry engineering for self-stopping, dishing free SiO/sub 2/-CMP

A new type of slurry, in which much surfactant was added into a conventional CeO/sub 2/ slurry, was developed for SiO/sub 2/ chemical mechanical polishing (CMP). The new slurry has unique characteristics. Because the polishing rate drops as planarization progresses, polishing can stop automatically....

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Bibliographische Detailangaben
Hauptverfasser: Nojo, H., Kodera, M., Nakata, R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Artificial intelligence
Automatic control
Laboratories
Microelectronics
Planarization
Polymers
Semiconductor device manufacture
Slurries
Thickness control
Wiring
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Beschreibung
Zusammenfassung:A new type of slurry, in which much surfactant was added into a conventional CeO/sub 2/ slurry, was developed for SiO/sub 2/ chemical mechanical polishing (CMP). The new slurry has unique characteristics. Because the polishing rate drops as planarization progresses, polishing can stop automatically. Therefore, it is easy to control the remaining thickness. Moreover, it is possible to planarize a surface without any dishing, even at a wide depressed portion (4 mm). Therefore, the global planarization within a chip can be obtained without any stopping layer or design limitations.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1996.553600