AC Performance of Polysilicon Leaky-Mode MSM Photodetectors

Pulse response of polysilicon metal-semiconductor-metal (MSM) photodetectors fabricated in a standard CMOS processes is described, including demonstration of pulse full-width at half-max (FWHM) of 1.32 ns. Pulse FWHM as low as 0.81 ns has been measured, as have 10%-90% rise times of 0.39 ns. Measure...

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Veröffentlicht in:	Journal of lightwave technology 2010-09, Vol.28 (18), p.2724-2729
Hauptverfasser:	Pownall, R, Kindt, J, Nikkel, P, Lear, K L
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties CMOS CMOS process Complementary metal-oxide-semiconductor (CMOS)-compatible optoelectronic integrated circuit Contact Contacts Detectors Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Exact solutions Information, signal and communications theory Integrated circuit measurements Integrated optoelectronics. Optoelectronic circuits leaky-mode metal-semiconductor-metal photodetectors Mathematical analysis Miscellaneous Modulation Modulation, demodulation Optical and optoelectronic circuits optical interconnect Optical waveguides Optoelectronic devices Photoconducting materials Photoconductivity Photodetectors Pulse measurements Schottky barriers Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Signal and communications theory Telecommunications and information theory Time domain
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Zusammenfassung:	Pulse response of polysilicon metal-semiconductor-metal (MSM) photodetectors fabricated in a standard CMOS processes is described, including demonstration of pulse full-width at half-max (FWHM) of 1.32 ns. Pulse FWHM as low as 0.81 ns has been measured, as have 10%-90% rise times of 0.39 ns. Measured detector performance is limited by laser diode modulation capabilities. An analytic expression for the time domain response in the presence of body and contact recombination is reported.
ISSN:	0733-8724 1558-2213
DOI:	10.1109/JLT.2010.2063016