Thermoelectric properties of doped bismuth-antimony single crystals

The thermoelectric phenomena in bismuth-antimony crystals doped by tellurium donor and tin acceptor impurities in temperature range 80/spl divide/300 K have been investigated. Crystals have been grown by horizontal zone recrystallization method with the use of regimes which provide their homogeneity. The area ranges of doping bismuth-antimony crystals in which thermoelectric figure of merit appears higher than in undoped crystals have been determined. The transport phenomena and thermoelectric figure of merit of Bi/sub 0.93/Sb/sub 0.07/ crystals at y/spl les/0.001 at.% Sn and Te have been investigated in detail. It was shown that thermoelectric figure of merit of Bi/sub 0.93/Sb/sub 0.07/ crystals doped y=0.001 at.% Sn in temperature range 80/spl divide/300 K exceeds thermoelectric figure of merit undoped and doped y/spl les/0.001 at.% Te crystals.