Thermal characteristics of an advanced bMPI-based 1T-DRAM cell

Thermal characteristics of an advanced bMPI-based 1T-DRAM cell

In this paper, we study the thermal characteristics of the bMPI-based 1T-DRAM cell. For a bMPI-FET, it can not only improve the thermal stability about 38% compared with the bPDSOI-FET due to the S/D-tied scheme, but also maintain the desired short-channel characteristics due to the block oxide stru...

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Hauptverfasser: Cheng-Hsin Chen, Jyi-Tsong Lin, Yi-Chuen Eng, Hsien-Nan Chiu, Tzu-Feng Chang, Yi-Hsuan Fan, Yu-Che Chang, Kuan-Yu Lu, Chih-Hsuan Tai
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitance
Capacitors
Etching
Lattices
Manufacturing processes
MOSFET circuits
Random access memory
Temperature
Thermal engineering
Thermal stability
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Beschreibung
Zusammenfassung:In this paper, we study the thermal characteristics of the bMPI-based 1T-DRAM cell. For a bMPI-FET, it can not only improve the thermal stability about 38% compared with the bPDSOI-FET due to the S/D-tied scheme, but also maintain the desired short-channel characteristics due to the block oxide structure.
ISSN:1946-1542
1946-1550
DOI:10.1109/IPFA.2010.5532078