Characterization of oxide traps by RTN measurement in MOSFETs and memory devices

Characterization of oxide traps by RTN measurement in MOSFETs and memory devices

Random telegraph noise (RTN) in various devices such as nano-wire, recessed-channel and high-k FET has been studied through various measurement techniques and analysis. By taking into account both effects which are variation of surface potential and poly depletion voltage drop, we proposed a new met...

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Bibliographische Detailangaben
Hauptverfasser: Shin, H, Byoungchan Oh
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electric variables measurement
Energy states
Equations
MOSFETs
Nanoscale devices
Noise measurement
Semiconductor device noise
Telegraphy
Threshold voltage
Voltage fluctuations
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Beschreibung
Zusammenfassung:Random telegraph noise (RTN) in various devices such as nano-wire, recessed-channel and high-k FET has been studied through various measurement techniques and analysis. By taking into account both effects which are variation of surface potential and poly depletion voltage drop, we proposed a new method for extracting both locations (x T , y T ) and energy level (E Cox - E T ) of oxide traps.
ISSN:1946-1542
1946-1550
DOI:10.1109/IPFA.2010.5531998