Extremely low-leakage GaAs P-i-N junctions and memory capacitors grown by atomic layer epitaxy
Leakage-limited P-i-N-i-P charge storage capacitors demonstrate a 1/e storage time of over 30 min at room temperature, corresponding to a current density of less than 50 pA/cm/sup 2/ at 1-V reverse bias for a 160*140- mu m/sup 2/ capacitor. These storage times are comparable to those of the best MBE...
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| Veröffentlicht in: | IEEE electron device letters 1990-06, Vol.11 (6), p.261-263 |
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| container_end_page | 263 |
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| container_issue | 6 |
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| container_title | IEEE electron device letters |
| container_volume | 11 |
| creator | Bedair, S.M. McDermott, B.T. Reid, K.G. Neudeck, P.G. Cooper, J.A. Melloch, M.R. |
| description | Leakage-limited P-i-N-i-P charge storage capacitors demonstrate a 1/e storage time of over 30 min at room temperature, corresponding to a current density of less than 50 pA/cm/sup 2/ at 1-V reverse bias for a 160*140- mu m/sup 2/ capacitor. These storage times are comparable to those of the best MBE-grown structures reported to date. For the diodes tested, which range in size from 4*10/sup -4/ to 4.9*10/sup -5/ cm/sup 2/, leakage is dominated by generation around the etched diode perimeter. The relatively small bulk generation current is evidence of the high quality of the atomic layer epitaxy (ALE)-grown junctions.< > |
| doi_str_mv | 10.1109/55.55274 |
| format | Article |
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These storage times are comparable to those of the best MBE-grown structures reported to date. For the diodes tested, which range in size from 4*10/sup -4/ to 4.9*10/sup -5/ cm/sup 2/, leakage is dominated by generation around the etched diode perimeter. The relatively small bulk generation current is evidence of the high quality of the atomic layer epitaxy (ALE)-grown junctions.< ></description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.55274</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Atomic layer deposition ; Capacitors ; Current density ; Electronics ; Etching ; Exact sciences and technology ; Gallium arsenide ; Interfaces ; Molecular beam epitaxial growth ; P-i-n diodes ; PIN photodiodes ; Semiconductor electronics. Microelectronics. Optoelectronics. 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These storage times are comparable to those of the best MBE-grown structures reported to date. For the diodes tested, which range in size from 4*10/sup -4/ to 4.9*10/sup -5/ cm/sup 2/, leakage is dominated by generation around the etched diode perimeter. The relatively small bulk generation current is evidence of the high quality of the atomic layer epitaxy (ALE)-grown junctions.< ></description><subject>Applied sciences</subject><subject>Atomic layer deposition</subject><subject>Capacitors</subject><subject>Current density</subject><subject>Electronics</subject><subject>Etching</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Interfaces</subject><subject>Molecular beam epitaxial growth</subject><subject>P-i-n diodes</subject><subject>PIN photodiodes</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Temperature</topic><topic>Testing</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bedair, S.M.</creatorcontrib><creatorcontrib>McDermott, B.T.</creatorcontrib><creatorcontrib>Reid, K.G.</creatorcontrib><creatorcontrib>Neudeck, P.G.</creatorcontrib><creatorcontrib>Cooper, J.A.</creatorcontrib><creatorcontrib>Melloch, M.R.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bedair, S.M.</au><au>McDermott, B.T.</au><au>Reid, K.G.</au><au>Neudeck, P.G.</au><au>Cooper, J.A.</au><au>Melloch, M.R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Extremely low-leakage GaAs P-i-N junctions and memory capacitors grown by atomic layer epitaxy</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1990-06-01</date><risdate>1990</risdate><volume>11</volume><issue>6</issue><spage>261</spage><epage>263</epage><pages>261-263</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Leakage-limited P-i-N-i-P charge storage capacitors demonstrate a 1/e storage time of over 30 min at room temperature, corresponding to a current density of less than 50 pA/cm/sup 2/ at 1-V reverse bias for a 160*140- mu m/sup 2/ capacitor. These storage times are comparable to those of the best MBE-grown structures reported to date. For the diodes tested, which range in size from 4*10/sup -4/ to 4.9*10/sup -5/ cm/sup 2/, leakage is dominated by generation around the etched diode perimeter. The relatively small bulk generation current is evidence of the high quality of the atomic layer epitaxy (ALE)-grown junctions.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/55.55274</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE electron device letters, 1990-06, Vol.11 (6), p.261-263 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_ieee_primary_55274 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Atomic layer deposition Capacitors Current density Electronics Etching Exact sciences and technology Gallium arsenide Interfaces Molecular beam epitaxial growth P-i-n diodes PIN photodiodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature Testing |
| title | Extremely low-leakage GaAs P-i-N junctions and memory capacitors grown by atomic layer epitaxy |
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