Extremely low-leakage GaAs P-i-N junctions and memory capacitors grown by atomic layer epitaxy

Extremely low-leakage GaAs P-i-N junctions and memory capacitors grown by atomic layer epitaxy

Leakage-limited P-i-N-i-P charge storage capacitors demonstrate a 1/e storage time of over 30 min at room temperature, corresponding to a current density of less than 50 pA/cm/sup 2/ at 1-V reverse bias for a 160*140- mu m/sup 2/ capacitor. These storage times are comparable to those of the best MBE...

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Veröffentlicht in:IEEE electron device letters 1990-06, Vol.11 (6), p.261-263
Hauptverfasser: Bedair, S.M., McDermott, B.T., Reid, K.G., Neudeck, P.G., Cooper, J.A., Melloch, M.R.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Atomic layer deposition
Capacitors
Current density
Electronics
Etching
Exact sciences and technology
Gallium arsenide
Interfaces
Molecular beam epitaxial growth
P-i-n diodes
PIN photodiodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature
Testing
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Zusammenfassung:Leakage-limited P-i-N-i-P charge storage capacitors demonstrate a 1/e storage time of over 30 min at room temperature, corresponding to a current density of less than 50 pA/cm/sup 2/ at 1-V reverse bias for a 160*140- mu m/sup 2/ capacitor. These storage times are comparable to those of the best MBE-grown structures reported to date. For the diodes tested, which range in size from 4*10/sup -4/ to 4.9*10/sup -5/ cm/sup 2/, leakage is dominated by generation around the etched diode perimeter. The relatively small bulk generation current is evidence of the high quality of the atomic layer epitaxy (ALE)-grown junctions.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.55274