12 GHz clocked operation of ultralow power interband resonant tunneling diode pipelined logic gates

12 GHz clocked operation of ultralow power interband resonant tunneling diode pipelined logic gates

We report on the successful demonstration of a functionally complete set of logic gates based on resonant interband tunneling diodes (RITDs) with a maximum operating frequency in excess of 12 GHz. At this high frequency of operation, the power dissipation is remarkably low-on the order of 0.5 mW per...

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Veröffentlicht in:IEEE journal of solid-state circuits 1997-02, Vol.32 (2), p.222-231
Hauptverfasser: Williamson, W., Enquist, S.B., Chow, D.H., Dunlap, H.L., Subramaniam, S., Peiming Lei, Bernstein, G.H., Gilbert, B.K.
Format: Artikel
Sprache:eng
Schlagworte:
Clocks
Frequency
Integrated circuit technology
Logic devices
Logic gates
Resonance
Resonant tunneling devices
RLC circuits
Schottky diodes
Semiconductor diodes
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Beschreibung
Zusammenfassung:We report on the successful demonstration of a functionally complete set of logic gates based on resonant interband tunneling diodes (RITDs) with a maximum operating frequency in excess of 12 GHz. At this high frequency of operation, the power dissipation is remarkably low-on the order of 0.5 mW per gate. The circuits for all gates, AND, OR, XOR, and INV, shared the same layout geometry, consisting of two Schottky diodes and three RITDs. Logical functionality was determined solely by varying the relative areas of the devices.
ISSN:0018-9200
1558-173X
DOI:10.1109/4.551914