TCAD optimization of field-plated InAlAs-InGaAs HEMTs

High-voltage InGaAs-InAlAs HEMTs featuring optimized field-plate structures are being developed. A TCAD approach has been adopted for their design. Two-dimensional device simulations have preliminarily been calibrated by comparison with DC and RF measurements from the baseline InP HEMT technology in...

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Bibliographische Detailangaben
Hauptverfasser: Saguatti, D, Chini, A, Verzellesi, G, Isa, M Mohamad, Ian, K W, Missous, M
Format: Tagungsbericht
Sprache:eng
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