TCAD optimization of field-plated InAlAs-InGaAs HEMTs

TCAD optimization of field-plated InAlAs-InGaAs HEMTs

High-voltage InGaAs-InAlAs HEMTs featuring optimized field-plate structures are being developed. A TCAD approach has been adopted for their design. Two-dimensional device simulations have preliminarily been calibrated by comparison with DC and RF measurements from the baseline InP HEMT technology in...

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Bibliographische Detailangaben
Hauptverfasser: Saguatti, D, Chini, A, Verzellesi, G, Isa, M Mohamad, Ian, K W, Missous, M
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Costs
Electric breakdown
HEMTs
Indium gallium arsenide
Indium phosphide
MODFETs
Passivation
Radio frequency
Solid modeling
Voltage
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Beschreibung
Zusammenfassung:High-voltage InGaAs-InAlAs HEMTs featuring optimized field-plate structures are being developed. A TCAD approach has been adopted for their design. Two-dimensional device simulations have preliminarily been calibrated by comparison with DC and RF measurements from the baseline InP HEMT technology into which the field plate is being incorporated. Simulations have then been used to design field-plate structures with optimal length and passivation thickness.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2010.5516397