High reliability performance of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates

High reliability performance of 0.1-μm Pt-sunken gate InP HEMT low-noise amplifiers on 100 mm InP substrates

Accelerated temperature lifetesting at T channel of 240, 255, and 270°C was performed on 0.1-μm Pt-sunken InP HEMT low-noise amplifiers fabricated on 100 mm InP substrates. The reliability performance was evaluated based on ΔS21

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Bibliographische Detailangaben
Hauptverfasser: Chou, Y C, Leung, D L, Biedenbender, M, Eng, D C, Buttari, D, Mei, X B, Lin, C H, Tsai, R S, Lai, R, Barsky, M E, Wojtowicz, M, Oki, A K, Block, T R
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Acceleration
HEMTs
Indium phosphide
Integrated circuit reliability
Low-noise amplifiers
mHEMTs
Microelectronics
Millimeter wave technology
MMICs
Temperature
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Beschreibung
Zusammenfassung:Accelerated temperature lifetesting at T channel of 240, 255, and 270°C was performed on 0.1-μm Pt-sunken InP HEMT low-noise amplifiers fabricated on 100 mm InP substrates. The reliability performance was evaluated based on ΔS21
ISSN:1092-8669
DOI:10.1109/ICIPRM.2010.5516184