InGaAsN as absorber in APDs for 1.3 micron wavelength applications

InGaAsN as absorber in APDs for 1.3 micron wavelength applications

Two issues with using InGaAsN as absorber in avalanche photodiodes (APDs) for 1310nm wavelength applications are addressed here. Firstly, we demonstrated InGaAsN p-i-n diodes with stable photoresponse around 1310nm but reverse leakage current density slightly above the acceptable limit of ~0.2mA/cm...

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Hauptverfasser: Ng, J S, Tan, S L, Goh, Y L, Tan, C H, David, J P R, Allam, J, Sweeney, S J, Adams, A R
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Avalanche photodiodes
Capacitance-voltage characteristics
Dark current
Gallium arsenide
Indium phosphide
Ionization
Leakage current
P-i-n diodes
Photonic band gap
Tunneling
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Beschreibung
Zusammenfassung:Two issues with using InGaAsN as absorber in avalanche photodiodes (APDs) for 1310nm wavelength applications are addressed here. Firstly, we demonstrated InGaAsN p-i-n diodes with stable photoresponse around 1310nm but reverse leakage current density slightly above the acceptable limit of ~0.2mA/cm 2 at 150kV/cm. We also investigated whether or not InGaAsN as absorber is compatible with Al 0.8 Ga 0.2 As (the proposed avalanche material in our separate-absorption-multiplication APD design) in terms of the relationship between α and β in InGaAsN. Our observations suggest α ~ β in InGaAsN, making it compatible with Al 0.8 Ga 0.2 As.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2010.5516060