400 GHz FMAX InP/GaAsSb HBT for millimeter-wave applications
This paper presents multi-finger InP/GaAsSb/InP HBTs designed for millimeter-wave applications. The 0.7×10 μm 2 emitter size 4- and 8- finger devices demonstrated f T and f max above 200 GHz and 400 GHz respectively, a current gain of 28 and an emitter breakdown voltage of 7V. We also report on the...
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| creator | Nodjiadjim, V Riet, M Scavennec, A Berdaguer, P Piotrowicz, S Jardel, O Godin, J Bove, P Lijadi, M |
| description | This paper presents multi-finger InP/GaAsSb/InP HBTs designed for millimeter-wave applications. The 0.7×10 μm 2 emitter size 4- and 8- finger devices demonstrated f T and f max above 200 GHz and 400 GHz respectively, a current gain of 28 and an emitter breakdown voltage of 7V. We also report on the performances of a 2-stage power amplifier based on more conservative devices (1×15 μm 2 two-emitter finger). This circuit delivers an output power above 15 dBm at 60 GHz. |
| doi_str_mv | 10.1109/ICIPRM.2010.5515954 |
| format | Conference Proceeding |
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The 0.7×10 μm 2 emitter size 4- and 8- finger devices demonstrated f T and f max above 200 GHz and 400 GHz respectively, a current gain of 28 and an emitter breakdown voltage of 7V. We also report on the performances of a 2-stage power amplifier based on more conservative devices (1×15 μm 2 two-emitter finger). This circuit delivers an output power above 15 dBm at 60 GHz.</abstract><pub>IEEE</pub><doi>10.1109/ICIPRM.2010.5515954</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1092-8669 |
| ispartof | 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM), 2010, p.1-4 |
| issn | 1092-8669 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Fingers Heterojunction bipolar transistors III-V semiconductor materials Indium phosphide Integrated circuit interconnections Millimeter wave technology Power amplifiers Synthetic aperture sonar Thermal resistance Voltage |
| title | 400 GHz FMAX InP/GaAsSb HBT for millimeter-wave applications |
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