400 GHz FMAX InP/GaAsSb HBT for millimeter-wave applications

This paper presents multi-finger InP/GaAsSb/InP HBTs designed for millimeter-wave applications. The 0.7×10 μm 2 emitter size 4- and 8- finger devices demonstrated f T and f max above 200 GHz and 400 GHz respectively, a current gain of 28 and an emitter breakdown voltage of 7V. We also report on the...

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Hauptverfasser:	Nodjiadjim, V, Riet, M, Scavennec, A, Berdaguer, P, Piotrowicz, S, Jardel, O, Godin, J, Bove, P, Lijadi, M
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Fingers Heterojunction bipolar transistors III-V semiconductor materials Indium phosphide Integrated circuit interconnections Millimeter wave technology Power amplifiers Synthetic aperture sonar Thermal resistance Voltage
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Beschreibung
Zusammenfassung:	This paper presents multi-finger InP/GaAsSb/InP HBTs designed for millimeter-wave applications. The 0.7×10 μm 2 emitter size 4- and 8- finger devices demonstrated f T and f max above 200 GHz and 400 GHz respectively, a current gain of 28 and an emitter breakdown voltage of 7V. We also report on the performances of a 2-stage power amplifier based on more conservative devices (1×15 μm 2 two-emitter finger). This circuit delivers an output power above 15 dBm at 60 GHz.
ISSN:	1092-8669
DOI:	10.1109/ICIPRM.2010.5515954