Optical and electrical properties of InP porous structures formed on P-N substrates

Optical and electrical properties of InP porous structures formed on P-N substrates

We demonstrated to form InP porous structures on n-type epitaxial layers grown on p-type (001) substrates. The high-density array of straight pores with 150nm diameter and 5000nm depth was formed by the electrochemical anodization process, where the pore depth could be controlled by the anodization...

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Hauptverfasser: Okazaki, Hiroyuki, Sato, Taketomo, Yoshizawa, Naoki, Hashizume, Tamotsu
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electrochemical processes
Electrodes
Epitaxial layers
Indium phosphide
Optoelectronic devices
Photonic crystals
Reflectivity
Semiconductor nanostructures
Substrates
Surface morphology
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Beschreibung
Zusammenfassung:We demonstrated to form InP porous structures on n-type epitaxial layers grown on p-type (001) substrates. The high-density array of straight pores with 150nm diameter and 5000nm depth was formed by the electrochemical anodization process, where the pore depth could be controlled by the anodization time in the n-type layer. The present p-n InP porous structures show the low optical reflectance in UV-, visible- and near-infrared region. The current transport properties clearly show the rectifying behavior. These features are very promising for practical application to high-efficiency photo-sensitive devices.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2010.5515942